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2 edition of fabrication and characterisation of Rf sputtered CuInSe2 and CuInS2 thin films. found in the catalog.

fabrication and characterisation of Rf sputtered CuInSe2 and CuInS2 thin films.

A. N. Y. Samaan

fabrication and characterisation of Rf sputtered CuInSe2 and CuInS2 thin films.

by A. N. Y. Samaan

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  • 23 Currently reading

Published by University of Salford in Salford .
Written in English


Edition Notes

PhD thesis, Electrical Engineering.

SeriesD55701/85
ID Numbers
Open LibraryOL20905968M

In this study, the viability of growing a CuInSe 2 thin film solar absorber by sputtering using a single target composed of CuSe and InSe powders was investigated. It was found that the ability to obtain a sputtered film with a stoichiometric composition was greatly dependent on the substrate temperature and that the optimum conditions could be obtained by adjusting the sputtering radio. RF sputtering: A viable tool for MEMS fabrication obtain highly c-axis oriented films, which is a requirement for these films to be piezoelectric in nature. In addition to the dielectric films, thin films of Cr, Au, Ti and Pt on silicon or glass substrates, (used for ZnO deposition) were also deposited by RF sputtering process.

CuInS 2 thin films were deposited by chemical spray pyrolysis from aqueous solutions containing CuCl 2, InCl. and thiourea at substrate temperature of °C and annealed at °C in air. [Cu]/[In] molar ratio was varied from to in precursor solution. The influence of [Cu]/[In] molar ratio on structural, morphological and optical properties of CuInS2 thin films was Author: Mazabalo Baneto, Damgou Mani Kongnine, Krishnasamy Ravichandran, Donafolgo Soro, Koffi Sagna, Kossi.   The surface roughness of the Ge Sb 25 Se thin films (Table 4) has a similar comportment to the Ge Sb Se thin films; it ranges from to by:

Fabrication of CuInS2/CdS/ZnO:Al thin film solar cells Aneesh P. M. Preparation and characterisation of CuInSe2 thin films by two stage process Mathson Studies on RF magnetron sputtered ITO thin films Jithin Jayapalan MPreparation and characterization of RF magnetron sputtered ITO thin films Sreekanth J. Varma. Cerium-Vanadium mixed oxide thin films were deposited at room temperature by varying RF power in RF magnetron sputtering. The morphology and structural features were studied by taking FESEM and XRD and optical properties were analyzed by taking transmittance and absorption spectra. The crystalline film shows orthorhombic CeVO3 phase and the observed grain size varies from nm to by: 1.


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Fabrication and characterisation of Rf sputtered CuInSe2 and CuInS2 thin films by A. N. Y. Samaan Download PDF EPUB FB2

With a fixed radio frequency power of W and H2S flow in the range of 20–30 sccm, high quality CuInS2 films with good adhesion were sputtered on bare float glass substrates at a substrate. Not Available adshelp[at] The ADS is operated by the Smithsonian Astrophysical Observatory under NASA Cooperative Agreement NNX16AC86ACited by: 3.

This paper describes fabrication of thin films of CuInSe2 for solar cells by rf- sputtering, a method which is well suited, in principle, to the production of films of multi-element materials like by: Summary Abstract: Characterization of rf-sputtered CuInSe 2 films: Publication: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Volume 1, Issue 2, April 1,pp Publication Date: 04/ Origin: AIP: Bibliographic Code: JVSTK: Abstract Not Available Bibtex entry for this abstract Preferred.

Summary. Electrical data from sputtered and annealedp-type CuInS 2 thin films have been obtained over a range of temperatures. An analysis of hole mobilityvs. temperature data indicates that the charge carriers are predominantly scattered by neutral and ionized impurities and by acoustic-mode by: 3.

The results showed that the pure, flatness, and well crystallized CuInS2 thin films with good electrical and optical property had been obtained, meaning that the chemical bath deposition in acid. CuInS2 thin films were fabricated by one-step electrochemical deposition from a single alkaline aqueous solution and using conductive glass as the substrate.

This chapter describes fabrication and characterization CuInS2 based solar cell with Cd-free I3-In2S3 buffer layer using CSP technique. This technique is quite suitable for solar cell production because of the possibility of large area deposition of thin films at low.

A segmented Zn:Al-target with an Al-content of wt% was used. The oxygen flow during sputtering was in the range of – sccm (standard cubic centimeter per minute).

The layer thicknesses ranged from to nm. Subsequently, CIS films were deposited by RF reactive sputtering with a conventional RF ( MHz) sputter by: 6. In general, the wide range of alloy compositions investigated and the associated properties of the CuInSe 2 films obtained has provided useful information necessary for further optimization of the process steps of the co-sputtering and the graphite box selenization techniques for the fabrication of quality CuInSe 2 thin by: Thin film deposition.

Thin film deposition was performed with an AJA Orion 5 magnetron sputtering system. Ca (%), Si (%) and Eu (%) targets were installed in the vacuum chamber. Ca and Eu targets were packed in mineral oil as by: 2. Abstract. CuInS 2 (CIS) thin films were fabricated by jet nebulizer spray technique at various substrate temperatures such as, and °C.

The XRD revealed the formation of chalcopyrite crystalline phase with (1 1 2) preferential orientation. The film prepared at °C has better crystallinity with minimum dislocation density and by: 2.

Abstract. We present a study of R.F. sputtered CuInSe 2 films from a 5% Se excess compound target in Ar and Ar/H 2 atmospheres. The introduction of H 2 in the sputtering chamber allows a fine control of film stoichiometry.

A relation between Se contents of films and Author: J. Santamaria, E. Iborra, I. Martil, G. Gonzalez-Diaz, J. Gomez de Salazar, F. Sanchez-Quesada. Thin films of polycrystalline CuInSe2 were deposited on Pyrex substrates using a simple system of close spaced vapor transport (CSVT).

The used CSVT system is an open horizontal reactor. Citations (). PhD Thesis, 'The Fabrication and Characterisation of rf Sputtered CuInSe2 and CuInS2 Thin Films', ().Author: NS Lucas. In this work, Cu2ZnSnS4 (CZTS) thin films were prepared by the sulfurization of metal precursors deposited sequentially via radio frequency magnetron sputtering on Mo-coated soda-lime glass.

The stack order of the precursors was Mo/Zn/Sn/Cu. Sputtered precursors were annealed in sulfur atmosphere with nine different conditions to study the impact of sulfurization time and substrate Cited by: 8. Applications of Surface Science 22/23 () North-Holland, Amsterdam COMPARISON OF PROPERTIES OF THIN FILMS OF CuInSez AND ITS ALLOYS PRODUCED BY EVAPORATION, RF-SPUTTERING AND CHEMICAL SPRAY PYROLYSIS J.J.

LOFERSKI, C. CASE, M. KWIETNIAK *, P.M. SARRO **, L. CASTANER *** and R. BEAULIEU Division of Engineering, Brown University, Cited by: 8. In this paper, Schottky diodes (SDs) obtained by evaporated thin films of aluminum on pulverized p-CuInS2/SnO2:F have been studied using J-V-T characteristics in a temperature range of K.

These characteristics show that aluminum acts as a rectifier metal-semiconductor contact. Characteristic variables of the Al/p-CuInS2/SnO2:F junctions, such as the current density, the serial Author: T. Ben Nasrallah, D. Mahboub, M. Jemai, S. Belgacem.

CuInS2 thin films have been made from copper, indium, and hydrogen sulfide gas using a two‐step technique which involves exposing Cu‐In films produced by sputtering pure copper and pure indium to H2S gas diluted with argon.

X‐ray diffraction, Auger electron spectroscopy, optical transmission, and electrical measurements were used to identify and characterize the by: Abstract Not Available Bibtex entry for this abstract Preferred format for this abstract (see Preferences): Find Similar Abstracts.

In the present work, we report preparation, characterization and application of RF sputtered SiO2, Si3N4 and ZnO films for MEMS fabrication. The effect of RF power, sputtering pressure and target-to-substrate spacing was investigated on the structural and other properties of the films.

The residual stress in the films was obtained usingwafer Cited by: Ping Fan, Guang-Xing Liang, Xing-Min Cai, Zhuang-Hao Zheng and Dong-Ping Zhang, The influence of annealing temperature on the structural, electrical and optical properties of ion beam sputtered CuInSe2 thin films, Thin Solid Films,16, (), ().Cited by: A model for the successful growth of polycrystalline films of CuInSe 2 by multisource physical Effects of deposition profiles on RF-sputtered Cu(In,Ga)Se2 films at low substrate temperature, Applied Surface Science, /, Characterization of CuInS2 thin films .